二硫化鉬晶體(2H-合成/99.995%/p 型) MoS2(Molybdenum Disulfide)-syn
晶體尺寸:~10毫米
電學性能:P型半導體
晶體結構:六邊形
晶胞參數:a = b = 0.315 nm, c = 1.229 nm, α = β = 90°, γ = 120°
晶體類型:合成
晶體純度:>99.995%
X-ray diffraction on a 2H-MoS2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10
Powder X-ray diffraction (XRD) of a single crystal MoS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal MoS2 by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal MoS2. Measurement was performed with a 785 nm Raman system at room temperature.